Характеристики
STF11NM60ND, МОП-транзистор, N Канал, 10 А, 600 В, 0.37 Ом The STF11NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET belongs to the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout and associates all advantages of reduced ON-resistance and fast switching with an intrinsic fast recovery body diode. It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.
• The worldwide best RDS (ON) area amongst the fast recovery diode device
• 100% Avalanche tested
• Low gate input resistance
• Extremely high dV/dt and avalanche capabilities
Полупроводники — ДискретныеТранзисторыМОП-транзисторы