Характеристики
STB60NF06LT4, МОП-транзистор, N Канал, 60 А, 60 В, 16 мОм The STB60NF06LT4 is a STripFET™ II N-channel Power MOSFET developed using STMicroelectronics unique Single Feature Size™ strip-based process. The device has extremely high packing density for low ON-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
• Low threshold drive
• -55 to 175 C Operating junction temperature range
Полупроводники — ДискретныеТранзисторыМОП-транзисторы