Характеристики
SIA433EDJ-T1-GE3, МОП-транзистор, P Канал, -12 А, -20 В The SIA433EDJ-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, battery switch and charger switch applications.
• New thermally enhanced PowerPAK® package
• Small footprint area
• Low ON-resistance
• 100% Rg tested
• Built in ESD protection with Zener diode
• 1800V ESD performance
• Halogen-free
Полупроводники — ДискретныеТранзисторыМОП-транзисторы