Характеристики
IXYH20N120C3D1, БТИЗ транзистор, 36 А, 4 В, 230 Вт, 1.2 кВ IGBT Discretes, IXYS XPT series
The XPT™ range of discrete IGBTs from IXYS feature Extreme-light Punch-Through thin wafer technology, resulting in reduced thermal resistance and lower energy losses. These devices offer fast switching times with low tail current, and are available in a variety of industry standard and proprietary packages.Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные