Характеристики
IRG7PH35UD1-EP, INSULATED GATE BIPOLAR TRANSISTORCo-Pack IGBT over 21A, Infineon
Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.Полупроводники — ДискретныеТранзисторыБТИЗ Одиночные