Характеристики
IRG4BC20FPBF, БТИЗ транзистор, 16 А, 1.66 В, 60 Вт, 600 В Single IGBT up to 20A, Infineon
Optimised IGBTs designed for medium frequency applications with fast response which provide the user with the highest efficiency available. These devices utilise FRED diodes optimised to provide the best performance with IGBTsПолупроводники — ДискретныеТранзисторыБТИЗ Одиночные