Характеристики
IRFU120PBF, МОП-транзистор, N Канал, 7.7 А, 100 В, 270 мОм The IRFU120PBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
• Dynamic dV/dt rating
• Ease of paralleling
• Straight lead
• Repetitive avalanche rated
Полупроводники — ДискретныеТранзисторыМОП-транзисторы