IRFI720GPBF, МОП-транзистор, N Канал, 2.6 А, 400 В, 1.8 Ом

Характеристики

IRFI720GPBF, МОП-транзистор, N Канал, 2.6 А, 400 В, 1.8 Ом The IRFI720GPBF is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.

• Isolated package
• 2.5kVRMS (t = 60s, f = 60Hz) High voltage isolation
• 4.8mm Sink to lead creepage distance
• Dynamic dV/dt rating
• Low thermal resistance

Полупроводники — ДискретныеТранзисторыМОП-транзисторы