Характеристики
IRF730APBF, МОП-транзистор, N Канал, 5.5 А, 400 В, 1 Ом The IRF730APBF is a N-channel enhancement-mode Power MOSFET with low gate charge.
• Improved gate, avalanche and dynamic dV/dt ruggedness
• Fully characterized capacitance and avalanche voltage and current
• Effective COSS specified
• Simple drive requirements
Полупроводники — ДискретныеТранзисторыМОП-транзисторы