IPD122N10N3GATMA1, МОП-транзистор, N Канал, 59 А, 100 В

Характеристики

IPD122N10N3GATMA1, МОП-транзистор, N Канал, 59 А, 100 В The IPD122N10N3 G is an OptiMOS™ N-channel Power MOSFET offers superior solutions for high efficiency and high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS (ON) and FOM (figure of merit).

• Excellent switching performance
• World’s lowest RDS (ON)
• Very low Qg and Qgd
• Excellent gate charge x RDS (ON) product (FOM)
• Halogen-free, Green device
• Environmentally friendly
• Increased efficiency
• Highest power density
• Less paralleling required
• Smallest board-space consumption
• Easy-to-design products
• Normal level
• Qualified according to JEDEC for target application
• Ideal for high-frequency switching and synchronous rectification

Полупроводники — ДискретныеТранзисторыМОП-транзисторы