Характеристики
FQT5P10TF, МОП-транзистор, P Канал, -1 А, -100 В, 820 мОм The FQT5P10TF is a -100V P-channel QFET® MOSFET produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier, DC motor control and variable switching power applications.
• Low gate charge (typical 6.3nC)
• Low Crss (typical 18pF)
• 100% Avalanche tested
• ±30V Gate to source voltage
• 62.5 C/W Thermal resistance, junction to ambient
Полупроводники — ДискретныеТранзисторыМОП-транзисторы