Характеристики
FQP30N06, МОП-транзистор, N Канал, 30 А, 60 В, 0.031 Ом The FQP30N06 is a 60V N-channel QFET® enhancement mode Power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance and to provide superior switching performance and high avalanche energy strength. This product is general usage and suitable for many different applications.
• Low gate charge
• 100% Avalanche tested
• Improved system reliability in PFC and soft switching topologies
• Switching loss improvements
• Lower conduction loss
• 175 C Maximum junction temperature rating
Полупроводники — ДискретныеТранзисторыМОП-транзисторы