Характеристики
FQP13N06L, МОП-транзистор, N Канал, 13.6 А, 60 В, 0.088 Ом The FQP13N06L is a QFET® N-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
• 100% Avalanche tested
• 4.8nC Typical low gate charge
• 17pF Typical low Crss
Полупроводники — ДискретныеТранзисторыМОП-транзисторы