Характеристики
FQD8P10TM, МОП-транзистор, P Канал, -6.6 А, -100 В, 0.41 Ом The FQD8P10TM is a QFET® P-channel enhancement-mode Power MOSFET produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance, provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
• 100% Avalanche tested
• 12nC Typical low gate charge
• 30pF Typical low Crss
Полупроводники — ДискретныеТранзисторыМОП-транзисторы