Характеристики
FDS6699S, МОП-транзистор, N Канал, 21 А, 30 В, 3.6 мОм The FDS6699S is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. It includes an integrated Schottky diode using Fairchild’s monolithic SyncFET™ technology.
• High performance Trench technology for extremely low RDS (ON) and fast switching
• High power and current handling capability
• 100% RG (gate resistance) tested
Полупроводники — ДискретныеТранзисторыМОП-транзисторы