Характеристики
FDS6576, МОП-транзистор, P Канал, -11 А, -20 В, 14 мОм The FDS6576 is a 2.5V specified P-channel MOSFET in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench® process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 to 12V). It can be used in load switch and battery protection.
• Fast switching speed
• High performance Trench technology for extremely low RDS (ON)
• High power and current handling capability
• 43nC Typical low gate charge
Полупроводники — ДискретныеТранзисторыМОП-транзисторы