Характеристики
FDN335N, МОП-транзистор, N Канал, 1.7 А, 20 В, 70 мОм The FDN335N is a N-channel 2.5V specified MOSFET uses advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
• Low gate threshold voltage
• High performance trench technology for extremely low RDS
• High power and current handling capability
Полупроводники — ДискретныеТранзисторыМОП-транзисторы