Характеристики
FDMS6673BZ, МОП-транзистор, P Канал, -28 А, -30 В The FDMS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor’s PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. It is suitable for load switch and battery pack applications.
• MSL1 robust package design
• 8kV Typical HBM ESD protection level
Полупроводники — ДискретныеТранзисторыМОП-транзисторы