Характеристики
FDME410NZT, МОП-транзистор, N Канал, 7 А, 20 В, 0.019 Ом The FDME410NZT is a single N-channel MOSFET designed using Fairchild Semiconductor’s advanced PowerTrench® process to optimize the RDS (ON) @ VGS = 1.5V on special MicroFET lead-frame. It is suitable for Li-ion battery pack, base band switch and load switch applications.
• Halogen-free
• >1800V HBM ESD protection level
Полупроводники — ДискретныеТранзисторыМОП-транзисторы