Характеристики
FDG330P, МОП-транзистор, P Канал, 2 А, -12 В, 0.084 Ом The FDG330P is a 1.8V specified P-channel MOSFET produced using Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management and load switch applications.
• Low gate charge
• High performance Trench technology for extremely low RDS (ON)
• Compact industry standard surface-mount package
Полупроводники — ДискретныеТранзисторыМОП-транзисторы