Характеристики
FDD306P, МОП-транзистор, P Канал, 6.7 А, -12 В, 90 мОм The FDD306P is a 1.8V specified P-channel MOSFET uses Fairchild’s advanced low voltage PowerTrench® process. It has been optimized for battery power management.
• Fast switching speed
• High performance Trench technology for extremely low RDS (ON)
• High power and current handling capability
Полупроводники — ДискретныеТранзисторыМОП-транзисторы