Характеристики
FDB024N06, МОП-транзистор, N Канал, 120 А, 60 В, 0.0018 Ом The FDB024N06 is a N-channel MOSFET produced using Fairchild Semiconductor’s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and renewable system.
• Fast switching speed
• Low gate charge
• High performance Trench technology for extremely low RDS (ON)
• High power and current handling capability
Полупроводники — ДискретныеТранзисторыМОП-транзисторы