Характеристики
BUK7Y8R7-60E, МОП-транзистор, N Канал, 87 А, 60 В The BUK7Y8R7-60E is a N-channel standard level MOSFET designed using TrenchMOS® technology. The device has been designed and qualified to AEC-Q101 standard for use in high performance automotive applications.
• Repetitive avalanche rated
• Suitable for thermally demanding environments due to 175 C rating
• True standard level gate with VGS (th) rating of greater than 1V at 175 C
Полупроводники — ДискретныеТранзисторыМОП-транзисторы