Характеристики
AUIRFL014NTR, МОП-транзистор, N Канал, 1.9 А, 55 В, 0.16 Ом The AUIRFL014NTR is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized design, provides an extremely efficient and reliable operation. It is suitable for port injection application.
• Advanced planar technology
• Dynamic dV/dt rating
• Fully avalanche rating
• Repetitive avalanche allowed up to Tjmax
Полупроводники — ДискретныеТранзисторыМОП-транзисторы