Характеристики
SI7623DN-T1-GE3, МОП-транзистор, P Канал, -35 А, -20 В The SI7623DN-T1-GE3 is a 20VDS TrenchFET® P-channel enhancement-mode Power MOSFET suitable for load switch, charger switch, adaptor switch and battery switch applications.
• 100% Rg tested
• 100% UIS tested
• Halogen-free
• -55 to 150 C Operating temperature range
Полупроводники — ДискретныеТранзисторыМОП-транзисторы