Характеристики
IXFN230N10, МОП-транзистор, N Канал, 230 А, 100 В, 6 мОм The IXFN230N10 is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode (HiPerFET™). It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
• International standard packages
• MiniBLOC with aluminium nitride isolation
• Rugged polysilicon gate cell structure
• Avalanche rating
• Guaranteed FBSOA
• Low package inductance
• Easy to mount
• Space saving
Полупроводники — ДискретныеТранзисторыМОП-транзисторы