Характеристики
IPD100N04S402ATMA1, МОП-транзистор, N Канал, 100 А, 40 В The IPD100N04S4-02 is a N-channel enhancement-mode MOSFET with low switching and conduction power losses for highest thermal efficiency.
• AEC-Q101 qualified
• MSL1 up to 260 C peak reflow
• Green device
• 100% Avalanche tested
• Optimized total gate charge enables smaller driver output stages
Полупроводники — ДискретныеТранзисторыМОП-транзисторы