Характеристики
FQU13N06LTU, МОП-транзистор, N Канал, 11 А, 60 В, 0.092 Ом The FQU13N06LTU is a QFET® enhancement-mode N-channel Power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. It is suitable for switched mode power supplies, audio amplifier and variable switching power applications.
• Low level gate drive requirements allowing direct operation form logic drivers
• 100% Avalanche tested
• 4.8nC Typical low gate charge
• 17pF Typical low Crss
Полупроводники — ДискретныеТранзисторыМОП-транзисторы