Характеристики
FDD10AN06A0, МОП-транзистор, N Канал, 50 А, 60 В, 0.0094 Ом The FDD10AN06A0 is a N-channel MOSFET produced using Fairchild Semiconductor’s PowerTrench® process. It has been designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It features faster switching and lower gate charge than other MOSFETs with comparable RDS (ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies) and DC-to-DC power supply designs with higher reliability and system efficiency.
• Low miller charge
• Low Qrr body diode
• UIS Capability (single pulse and repetitive pulse)
Полупроводники — ДискретныеТранзисторыМОП-транзисторы